512kByte FRAM NVRAM Module Fujitsu MB85RS4MT

Description

The RAK15006 FRAM module features the Fujitsu MB85RS4M storage chip. With this low power non-volatile RAM you can secure your settings and collect data from power outages without the limitation of write cycles as known by other NVRAM technologies. With a data retention of 10 years and 10 trillion write cycles, it outperforms any EEPROM or Flash storage devices.

Its capacity of 512 kByte is sufficient for many applications.

Features

• Temperature range:-40℃ to +85℃
• SPI compatible digital interface, supports 40 MHz
• Operating power supply current 2.6 mA (Typ @40 MHz)
• Standby current 50 μA (Typ)
• 524288 words × 8 bits
• High Reliability:
  • Read/write endurance: 1,000,000,000,000 /byte
  • Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Module size: 10 x 10mm

Documentation

• RAK15006 Overview

• RAK15006 Overview